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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 900 Collector-base voltage Open emitter Collector-emitter voltage Open base 800 10 5 3 TC=25ae 80 150 -55~150 Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature UNIT V V V A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA; IE=0 IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=900V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 10 MIN 900 800 10 1.0 1.5 1.0 1.0 TYP. MAX UNIT V V V V V mA mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Switching times ton tstg tf TOR NDU ICO E SEM ANG INCH Turn-on time 1.0 Storage time Fall time IC=3A;RL=100| IB1=0.6A; IB2=-1.2A Pw = 20|I s; DutyU 2% 4.0 0.8 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4538 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4538 TOR NDU ICO E SEM ANG INCH 4 |
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